http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114606568-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b67be897178bfd4b283611e6864825d1 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-186 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-02 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-02 |
| filingDate | 2022-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b2753ff950d47ee3a915e6cc41ddb6ea http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a88fb015642e7a6bfc4a1fb5cf3ddea2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bed5f79fc98e8f9af7bafddd8ec3a14e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d4dfa5f43f8288eaec7cd50ffb9de40 |
| publicationDate | 2022-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114606568-A |
| titleOfInvention | Preparation method of low-dimensional tellurium crystal |
| abstract | The invention discloses a preparation method of a low-dimensional tellurium crystal. The preparation method comprises the following steps: adopting a mechanical peeling method to obtain a silicon wafer with hexagonal boron nitride nanosheets combined on the surface as a substrate, placing the substrate in a quartz tube and passing the A preset quality of tellurium dioxide is used as a growth source, and the growth source and the substrate are simultaneously heated through a heating furnace, and a chemical vapor deposition reaction is performed at a preset temperature by controlling the growth source in a mixed atmosphere composed of argon and hydrogen gas, so as to The low-dimensional tellurium crystals were grown. The invention grows a low-dimensional tellurium crystal on a hexagonal boron nitride substrate with atomic level flatness based on a chemical vapor deposition method, and controls the temperature, reaction time, argon/hydrogen mixed gas ratio and flow rate of the growth source and the substrate. High-quality tellurium crystals can be prepared, with crystal sizes ranging from a few microns to tens of microns. The above preparation method has a simple process, does not require expensive growth sources, substrates and equipment, and greatly improves the quality of the prepared tellurium crystal. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115216748-A |
| priorityDate | 2022-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.