| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8389718e739e73d1a0b382997a60ee4f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-332 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45536
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45542
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45544
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-5096
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 |
| filingDate |
2021-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_740c3f5d836a1afdab6a5d58eebec124
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c078d7277c7e4eb98ac2b8c13d9d5d11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9b9836db864210b8e5ea1efdb1aafee2 |
| publicationDate |
2022-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-114606477-A |
| titleOfInvention |
Silicon Precursors for Silicon Nitride Deposition |
| abstract |
The present disclosure relates to a vapor deposition assembly for depositing silicon nitride on a substrate through a plasma enhanced cyclic deposition process. The present disclosure also relates to a method of depositing silicon nitride on a substrate by a plasma-enhanced cyclic deposition process. The method includes providing a substrate in a reaction chamber, providing a gas-phase silicon precursor according to the formula SiH3X into the reaction chamber, where X is iodine or bromine, removing excess silicon precursor and possible reaction by-products from the reaction chamber product, and reactive species generated by the nitrogen-containing plasma are provided into the reaction chamber to form silicon nitride on the substrate. The present disclosure also relates to structures and devices formed by the method. |
| priorityDate |
2020-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |