http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114597080-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d2b8914daa0752feb536b6ae3d7cc005 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E60-13 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G11-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G11-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G11-86 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G11-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G11-86 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G11-26 |
| filingDate | 2022-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_786ab8f809da945d95e01aef2bb1312e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d6ea3632f5a758edbb9015449a397b4e |
| publicationDate | 2022-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114597080-A |
| titleOfInvention | A kind of electrochemical capacitor tantalum shell ruthenium dioxide thin film electrode and preparation method thereof |
| abstract | The invention relates to an electrochemical capacitor tantalum shell ruthenium dioxide thin film electrode and a preparation method thereof, belonging to the technical field of thin film electrode preparation. The method for preparing a ruthenium dioxide thin film electrode in a tantalum shell of an electrochemical capacitor comprises successively using sandblasting, mixed acid etching and vacuum plasma to modify the inner wall substrate of the tantalum shell; further, a combined process of spin coating and high-frequency heating is used to uniformly deposit the precursor sol on the tantalum shell. On the surface of the inner wall of the shell, finally, a thermal decomposition method was used to make the precursor sol phase change to form a uniform RuO 2 thin film active layer, and a tantalum shell RuO 2 thin film electrode was obtained. The thickness of the thin-film electrode active layer is 9-10 μm, the adhesion is more than 12 MPa, the specific capacitance value is more than 350Fg -1 , and the number of cycles of charge and discharge is more than 50,000. Therefore, using this process can not only increase the capacitance of the tantalum shell thin film electrode, but also improve the cyclic charge-discharge stability of the energy storage device. |
| priorityDate | 2022-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.