| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d2fa8a5615378a3b566087bc857352ca |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3852
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-658
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-6567
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-6025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-612
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-9607
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-96
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3206 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-622
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-645
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-6267
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-5935 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-645
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-626
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-622
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-593 |
| filingDate |
2022-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_795232694cd1f685ea91a0e67ff494fa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af95429bbe3831fd4e30bf02728796dd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd8cf7898ba54323b4a19d44dcf3bf21 |
| publicationDate |
2022-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-114591090-A |
| titleOfInvention |
Silicon nitride ceramic substrate for circuit and preparation method thereof |
| abstract |
The invention relates to the field of ceramic substrates, provides a silicon nitride ceramic substrate for circuits and a preparation method thereof, and solves the problem that silicon nitride ceramics with high dimensional accuracy, high toughness and high thermal conductivity cannot be obtained by the preparation method of the prior art. The problem of the substrate; including the following preparation steps: (1) casting slurry preparation; (2) casting molding: the casting slurry is prepared into a casting green belt through a casting machine; (3) punching and forming: (4) lamination; (5) debinding; (6) high temperature gas pressure sintering; wherein, the α-Si 3 N 4 The dosage ratio of the powder to the sintering aid is 90-96:4-10 in weight percentage; the α-Si 3 N 4 powder is prepared by a self-propagating method. |
| priorityDate |
2022-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |