http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114583068-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_27a862b25ae5a5a49601c6c09c82b7a2 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-15 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-17 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-115 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50 |
| filingDate | 2020-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d81058bff74cb213644b471bf0ab1a81 |
| publicationDate | 2022-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114583068-A |
| titleOfInvention | Preparation method of hole functional layer and preparation method of quantum dot light-emitting diode |
| abstract | The present application relates to the technical field of display device technology, in particular to a method for preparing a hole functional layer and a method for preparing a quantum dot light-emitting diode. The preparation method of the hole function layer includes the following steps: depositing a hole function material solution; performing annealing treatment under the condition of ≤120° C. to obtain a hole function layer, wherein the solvent in the hole function material solution includes the first A solvent and a second solvent, the second solvent having a lower boiling point than the first solvent. The hole functional material solution used for film formation is selected as a mixed solvent including a first solvent and a second solvent. Because the boiling point of the second solvent is lower than that of the first solvent, the film formation annealing of the hole functional material solution is The temperature is significantly reduced, and annealing can be performed under the condition of ≤120 °C, which is much lower than the current annealing temperature, which can reduce the thermal damage of the hole functional layer, thereby improving the performance of the hole functional layer. |
| priorityDate | 2020-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 49.