| abstract |
Methods are provided for forming an interconnect structure on a substrate in a cluster processing system and thermally treating the interconnect structure. In one embodiment, a method for a device structure for a semiconductor device includes the steps of: forming a barrier layer in an opening formed in a layer of material disposed on a substrate; forming an interface layer on the barrier layer; and forming an interface layer on the interface layer forming a gap-fill layer; and performing an annealing process on the substrate, wherein the annealing process is performed at a pressure range greater than 5 bar. |