http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114551497-A

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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-20
filingDate 2022-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c0b2e82b65af86964c0da6a1776ca653
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publicationDate 2022-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-114551497-A
titleOfInvention A kind of vertical structure graphene-semiconductor dynamic diode high-performance generator and preparation method thereof
abstract The invention discloses a high-performance generator based on a vertical structure graphene-semiconductor dynamic diode and a preparation method thereof. The generator is mainly composed of a piezoelectric film layer, a graphene layer and a semiconductor layer. The graphene and the semiconductor are continuously contacted and separated in the vertical direction. The electric field built in the interface generated during the process will rebound the diffusion in the depletion layer. The electric charge generates high-energy hot carriers, and the ultrafast interface carrier separation between graphene and semiconductor is used to realize the collection and utilization of carriers, and then an effective electrical signal output can be obtained; at the same time, under the action of the piezoelectric film, the induced charge has a negative effect on the graphite. The alkene film is effectively doped to further improve the carrier concentration and output performance. The generator does not need bulky coils and complex external circuits, and can quickly and effectively collect more hot carriers generated by the interface, thereby outputting high-voltage and high-current signals. The generator is simple in structure and process, flexible, portable, integrated, and lightweight, and has broad application prospects.
priorityDate 2022-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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