http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114540958-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ac31afbea1cbbb03498644721ffb4a62 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0209 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-448 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-305 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-02 |
| filingDate | 2022-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_181838c28076724068cb76c7776d474c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_895ed1da40efe1a95112b6be87018df7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_381d0e628f6f64ecc3c01667864876da http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f147ca5ceedc2d7ab8657e5b153c663a |
| publicationDate | 2022-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114540958-A |
| titleOfInvention | A kind of double-layer transition metal chalcogenide continuous film and preparation method thereof |
| abstract | The invention discloses a double-layer transition metal chalcogenide continuous film and a preparation method thereof. The double-layer transition metal chalcogenide continuous film is composed of a substrate and double-layer crystal grains nucleated on the surface of the substrate. The grains are uniformly formed and continuously covered at the high steps of the substrate, the two layers are of the same size and aligned at the edges, and the transition metal chalcogenide is molybdenum disulfide, tungsten disulfide, molybdenum diselenide or tungsten diselenide; the The preparation method of the continuous film is a vapor deposition method, and a double-layered crystal grain is formed on the surface of the substrate, the upper and lower layers of the double-layered crystal grain are aligned and grown at a constant velocity, and spliced into a uniform and continuous double-layered film; the continuous film Can reach centimeter level, fully meet the requirements of high-performance electronic device integration. |
| priorityDate | 2022-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.