http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114540771-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d6a6f422b091ba12ea61d4adbf1b0e8e |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-024 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01T1-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0021 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01T1-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-54 |
| filingDate | 2022-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c46ec3e346e5c12ea99eb4e179b89ad http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5fb24e14df02328539c41138475c34c6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4f564bdfdbaa99bed38818a6f73caddd |
| publicationDate | 2022-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114540771-A |
| titleOfInvention | A kind of pure inorganic lead halide perovskite absorber layer and its preparation method and application |
| abstract | The invention relates to the technical field of semiconductor materials, and discloses a pure inorganic lead-halide perovskite X-ray detector and a preparation method and application thereof. The preparation method includes placing a conductive substrate coated with an intermediate layer of SnO in a dual temperature zone In the low temperature zone of the tube furnace, the precursor powder is placed in the high temperature zone of the double temperature zone tube furnace as the evaporation source; after the quartz tube is evacuated, the low temperature zone and the high temperature zone are heated to 100-300°C and 550-660°C respectively. ℃, the carrier gas is introduced, and the temperature is kept for 20-40 minutes, and a perovskite film is formed on the SnO 2 intermediate layer to obtain the pure inorganic lead-halide perovskite absorption layer. The perovskite layer in the absorption layer has good morphology, high flatness and good stability, and the prepared device has high X-ray sensitivity, good stability and low dark current, and is suitable for X-ray detection and imaging applications. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-116190491-A |
| priorityDate | 2022-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 41.