| abstract |
The present invention relates to a method for improving the mobility of organic transistors by passivating polymer transistor interfaces. First, hafnium tetrachloride (HfCl 4 ) was dissolved in deionized water (DI), and spin-coated on P+ doped silicon wafers to form a hafnium oxide (HfO 2 ) film by low-temperature thermal annealing; Polymethyl methacrylate (PMMA) is dissolved in butyl acetate (NBA), spin-coated on the surface of HfO 2 film, and a very thin PMMA film is formed by low-temperature thermal annealing to passivate the surface of HfO 2 , thereby Reduce the hysteresis of organic field effect transistors (OFETs) and improve the field effect mobility of OFETs. The solution phase process of the HfO 2 thin film is simple to operate, can be processed in an atmospheric environment, has a low preparation cost, is suitable for large-scale production, and has good prospects for the application of flexible and portable electronic devices. |