http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114512609-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8d5a7c33fc4a0b5999e4bda5d6bce10b |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-371 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-50 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y30-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05 |
| filingDate | 2022-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f8dfd966beebc1e24db62478d9dce3ae http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_10b7c06be343ad74c2e6d80b7199793d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6201827b6eefbc7fe538f5d808f6d615 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b426496f2694e95c56a5adb690d27b4e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c67f14ff7440a7552b187ea3b5fc776f |
| publicationDate | 2022-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114512609-A |
| titleOfInvention | A kind of organic memristor with ultra-low operating voltage and preparation method thereof |
| abstract | The invention discloses an organic memristor with ultra-low operating voltage and a preparation method thereof. The memristor is a vertical sandwich structure and includes a substrate, a bottom electrode, an organic functional layer and a top electrode in sequence from bottom to top; wherein, The organic functional layer is a nano-film prepared by spin-coating the organic functional layer solution on the bottom electrode. The organic functional layer solution is formed by dissolving sodium copper chlorophyll in ultrapure water, and the structural formula of the sodium copper chlorophyll is as shown in formula ( I) shown. The invention uses small and medium-sized molecules-sodium copper chlorophyll (organic salt), and controls the spin coating process parameters to solve the problem of easy crystallization based on the spin coating process of sodium copper chlorophyll. The uniform and smooth thin film was prepared, and a vertical sandwich structure device based on ITO/Chlorophyll sodium copper/Ag was prepared, which finally achieved ultra-low operating voltage, high on-off ratio, high retention characteristics, and read, write and erase cycles > 6000 times. |
| priorityDate | 2022-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.