http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114497426-A

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filingDate 2020-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7630b7b862e7da3aa33865eea70ebed3
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publicationDate 2022-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-114497426-A
titleOfInvention A method for improving the brightness of a perovskite light-emitting diode and a perovskite light-emitting diode
abstract The invention discloses a method for improving the brightness of a perovskite light-emitting diode and the perovskite light-emitting diode. A quaternary phosphine salt is used as a component in a perovskite precursor solution. During the annealing process, the The hydrophilic group (P + ) and the BX 3 ‑ anion on the surface of the perovskite grains produce electrostatic adsorption, which changes the preferred orientation of the perovskite grain growth, and the outer aromatic ring or aliphatic chain group has a large space The steric hindrance inhibits the agglomeration between grains and forms low-defect nanocrystals. The charge transport capability of the thin film is improved, and the high-brightness luminescence of perovskite devices is realized.
priorityDate 2020-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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