http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114497038-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d58981fab4bd1d823e810c26413d484 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8258 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3732 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8258 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-373 |
| filingDate | 2022-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f059d9b42b997c95b58a41813ea45dc1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f9f172400fc48b204ee2aaadcab1330 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e014a61a7f52b7d084e3e26f7de7fe07 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb55d8922a781271bb0a406ac368f1fc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dbbeafb08d3f0d39d27ada6ebb112ba5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_725db22df9db1ae88c438e236fa2b1fd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_caf4dc4c935508ef6bfaf66bcf8e5127 |
| publicationDate | 2022-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114497038-A |
| titleOfInvention | An integrated device of GaN HEMT device and p-type diamond MOSFET and preparation method thereof |
| abstract | The invention discloses an integrated device of a GaN HEMT device and a p-type diamond MOSFET and a preparation method thereof, comprising: a diamond substrate layer, a GaN buffer layer, an AlGaN barrier layer, a dielectric layer, a p-type diamond layer and a gate dielectric layer; an AlGaN layer The barrier layer is provided with a first source electrode, a first drain electrode and a first gate electrode; the gate dielectric layer is located on the p-type diamond layer; the p-type diamond layer is provided with a second source electrode and a second drain electrode, and the gate dielectric A second gate electrode is also provided on the layer. In the present invention, a GaN HEMT device is integrated on a diamond substrate, and a p-type diamond layer is grown on the diamond substrate to produce a p-type diamond-based MOSFET device, thereby realizing the heterogeneous integration of two device structures. The junction temperature of the device is effectively reduced, the volume of the integrated device is reduced, the integration degree of the device is improved, and the heat dissipation capability of the GaN HEMTs in the microwave high-power scenario is further improved. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115863169-A |
| priorityDate | 2022-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.