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filingDate 2020-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2022-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-114496923-A
titleOfInvention Semiconductor component and method of forming the same
abstract The present disclosure relates to semiconductor components and methods of forming the same. A method of forming a semiconductor device includes: forming a gate structure on a substrate; forming a first gate spacer and a second gate spacer on opposite sidewalls of the gate structure respectively; implanting a first gate spacer in the substrate a first dopant of conductivity type to form a lightly doped source region adjacent to the first gate spacer and a lightly doped drain region adjacent to the second gate spacer; in the lightly doped forming a patterned shield over a first portion of the drain region and leaving a second portion of the lightly doped drain region exposed; and implanting the first conductivity type in the substrate in the presence of the patterned shield of the second dopant, so that the second portion of the lightly doped drain region is transformed into a drain region.
priorityDate 2020-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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