http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114496029-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_28d6eaeb37d88d535b01d912c0660a54 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C7-1096 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C7-1069 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C7-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-419 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-418 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C7-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C7-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-419 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-418 |
filingDate | 2021-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01767026fe6eac5eb4949982a2f37422 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_235b9546fd7d6c761139e190714316f0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3af572b1ce67faf74bc769e051d1b8d6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2337f544c198e45fad2eefec857fc655 |
publicationDate | 2022-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-114496029-A |
titleOfInvention | A memory and method of use |
abstract | The present application discloses a memory and a method of using the memory. On the basis of retaining the input and output ports integrated with a first sense amplifier and a write drive circuit on one side of the memory unit, the memory also adds at least one on the other side of the memory unit. A second sense amplifier and at least one read drive circuit; wherein, each bit line in each memory cell in the memory cell array is connected with a second sense amplifier one-to-one, and the other end of the second sense amplifier is connected to the read drive circuit circuit connection. Since each bit line in each memory cell in the memory cell array is connected with a second sense amplifier, the data in the bit where the bit line is located can be read through each second sense amplifier without interfering with each other. In this way, a large amount of data can be read in parallel (as many bits of data can be read at the same time), which is especially suitable for high-bandwidth read and low-bandwidth write application scenarios. |
priorityDate | 2021-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Predicate | Subject |
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isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID7156993 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID426135032 |
Total number of triples: 23.