| abstract |
The present application belongs to the field of optoelectronic technology, and in particular relates to a quantum dot composite material, a preparation method thereof, and a light-emitting device. Wherein, the quantum dot composite material includes: quantum dot material and metal two-dimensional ene material and/or sulfided metal two-dimensional ene material. In the quantum dot composite material of the present application, the metal two-dimensional ene material and/or the sulfide metal two-dimensional ene material can provide a high-mobility transport channel for the charge on the surface of the quantum dot material, reducing the charge accumulation on the surface of the quantum dot; at the same time, it can improve the The heat dissipation performance of the quantum dot material, when applied to a light-emitting device, can reduce the operating temperature of the light-emitting region of the device, thereby improving the stability and safety of the device and prolonging the service life. |