http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114455536-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8ba2d606a5c43cbfb49a8af5a9d10d2f |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2201-0292 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B7-0035 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00301 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B7-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B7-007 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B7-02 |
| filingDate | 2022-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b7f81ce8979cf9b8edc17b7e38465f5a |
| publicationDate | 2022-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114455536-A |
| titleOfInvention | Wafer-level three-dimensional packaging method and structure of MEMS gas sensor |
| abstract | The invention provides a wafer-level three-dimensional packaging method and structure of a MEMS gas sensor. The method includes the steps of: providing a semiconductor substrate with an ASIC chip and a plurality of spaced through silicon vias formed therein; thinning the backside of the semiconductor substrate; and etching the backside of the semiconductor substrate to make the surface of the through silicon via protrude from the semiconductor The backside of the substrate; an insulating layer is formed on the backside of the semiconductor substrate; chemical mechanical polishing is performed on the backside of the semiconductor substrate to expose through silicon vias; photolithography and dry etching are performed to form a cavity on the backside of the semiconductor substrate; a MEMS will be formed The MEMS micro-heating plate of the device and the pre-bonded structure are eutectic bonded, the MEMS device is facing the cavity, the through-silicon via and the pad bonding of the MEMS micro-heating plate, the insulating layer and the insulating surface of the MEMS micro-heating plate are bonded ; Form TSV solder balls on the surface of the TSV on the front side of the ASIC chip; and cut to form a single MEMS gas sensor chip. The present invention helps to improve bonding performance and manufacturing process efficiency. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115692312-A |
| priorityDate | 2022-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.