| abstract |
The present invention relates to a semiconductor device and a method thereof fabricated using plasma-assisted atomic layer deposition technology. A method for manufacturing a semiconductor device using plasma-assisted atomic layer deposition technology, comprising: providing a substrate, the substrate comprising a silicon substrate and a first oxide layer. A plurality of stacked layers are deposited on the substrate, and the stacked layers include a dielectric layer and a conductor layer. The stacked layers are etched to form at least one trench. A second oxide layer is deposited on the stack and the trenches using a plasma-assisted atomic layer deposition apparatus. The plasma-assisted atomic layer deposition apparatus includes a chamber, an upper electrode and a lower electrode, and the upper electrode is located above the chamber and includes a plurality of shower heads. The first RF power device generates plasma from the plurality of showerheads of the upper electrode, the second RF power device cleans the plurality of showerheads, and the lower electrode is disposed below the chamber and connected to a third RF power device. A high resistance layer is deposited on the second oxide layer, and a low resistance layer is deposited on the high resistance layer. |