| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_887e125008cf84c53554d9e68cf7f02b |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-093
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3086
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0382
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0755
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3174
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-322
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2059
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2061 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09 |
| filingDate |
2021-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8750b0d26d4b5d56fb6e728d07fd848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83cd0ef1ee968214d1bc7d14561a1cb0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_67b9ca0c72f767bd4b9df0485a8dc1b3 |
| publicationDate |
2022-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-114442432-A |
| titleOfInvention |
Electron beam lithography with double layer resist |
| abstract |
This application relates to electron beam lithography with double layer resists. A method, apparatus and system for processing a stack of materials (100). A hydrogensilsesquioxane layer (200) is deposited on the material stack (100). A diffusion barrier layer (300) is deposited on the hydrogensilsesquioxane layer (200) to form a bilayer (302). The diffusion barrier layer (300) includes a material having a thickness that increases the aging of the hydrogensilsesquioxane layer (200) to alter the exposed hydrogensilsesquioxane layer (200) for a selected feature geometry having a desired width. 200) the amount of time before the dose of the electron beam (400) required. The electron beam (400) is directed through the surface (402) of the bilayer (302) to form the exposed portion (404) of the bilayer (302). The electron beam (400) applies a dose selected based on the pattern density of the components for the material stack (100) to have a desired level of hydrogensilsesquioxane layer (200) for the selected component geometry exposure. The hydrogensilsesquioxane layer (200) is developed. The exposed portion (404) remains on the material stack (100). |
| priorityDate |
2020-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |