http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114429943-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_35c057a2d73ae88b28d28f9bb2a08715 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f7cbf6a1a55b84ca15e7f7de42102989 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76847 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5283 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76852 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-528 |
| filingDate | 2020-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_29fb5470a33504297db48d3d465e6737 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db4315138797f730236af2278e203b2f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb9e849c4451dad323a75a2f944de875 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d79e27ab3159e1fb84dfaaab208bbb0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25576bfcb77756f30f23667cfb85db40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b69a3cbd90df9af57d2cb9187d8d2568 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eab3707113ae0eadb1520a0f96a4cda7 |
| publicationDate | 2022-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114429943-A |
| titleOfInvention | Semiconductor structure and method of forming semiconductor structure |
| abstract | A semiconductor structure and a method for forming the semiconductor structure, the method comprising: providing a substrate; forming a dielectric layer and a conductive layer in the dielectric layer on the substrate, the top surface of the conductive layer is lower than the top surface of the dielectric layer , the conductive layer has a groove in the dielectric layer; an initial protective layer is formed on the bottom surface and sidewall surface of the groove, and the thickness of the initial protective layer on the sidewall surface of the groove is smaller than the bottom of the groove The thickness of the initial protective layer on the surface; the initial protective layer on the surface of the sidewall of the groove and part of the initial protective layer on the bottom surface of the groove are modified to form a protective layer on the bottom surface of the groove, and the groove bottom surface is formed. A modified layer is formed on the surface of the sidewall and the surface of the protective layer at the bottom of the groove; the modified layer is removed until the dielectric layer on the sidewall of the groove is exposed. The performance of the semiconductor structure formed by the method is improved. |
| priorityDate | 2020-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.