http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114420785-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7cc9eecbc2c41ebd062597003b8beb9c |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1828 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1864 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 |
| filingDate | 2021-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_99c2028016c876034d8bc6654d1932bc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c0d96aa3cbb947938f8522b6932e35d8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a069995205f693ce81d5b0372fd696b1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7859070c1edd8ee0c1310a5f226c8618 |
| publicationDate | 2022-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114420785-A |
| titleOfInvention | Layered oxychalcogenide composite CdS photoelectric material and preparation method and application |
| abstract | The invention relates to a composite optoelectronic material, in particular to a layered oxychalcogenide compound CdS optoelectronic material, a preparation method and application thereof, comprising the following steps: S1: cleaning a conductive substrate; S2: obtaining the cleaned conductive substrate obtained in step S1 A CdS film is prepared on a conductive substrate; S3: configure an oxychalcogenide slurry, spin-coat on the CdS film obtained in step S2 and vacuum anneal; S4: screen-print silver paste on the composite film obtained in step S3 as a The back electrode is used to obtain the layered oxychalcogenide compound CdS photoelectric material, the structure of which is, from bottom to top, a conductive substrate, a CdS film, an oxychalcogenide film and an Ag electrode. Compared with the prior art, the present invention combines the layered oxychalcogenide compound CdS to prepare a thin film optoelectronic material with a heterostructure. Due to the built-in potential at the heterointerface, the recombination of carriers can be effectively suppressed and the optoelectronic performance can be realized. a substantial increase. |
| priorityDate | 2021-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.