http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114420638-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cb2271efd5679756cacf0b7602d5015e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-20 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| filingDate | 2022-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c7b08633a4f12b03e4453498ef3e726 |
| publicationDate | 2022-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114420638-A |
| titleOfInvention | Method of fabricating semiconductor structure and semiconductor structure |
| abstract | The present disclosure provides a method for fabricating a semiconductor structure and a semiconductor structure. The method for fabricating a semiconductor structure includes: providing a substrate, where the substrate includes a first region and a second region; and forming a first device on the first region, the first device including a first gate structure, the first gate structure including a first work function layer; forming a second device on the second region, the second device including a second gate structure, the second gate structure including a second work function layer ; The top surface of the first gate structure is flush with the top surface of the second gate structure. In the present disclosure, the first gate structure of the first device and the second gate structure of the second device are formed in the same etching process, and the process heights of the first gate structure and the second gate structure are equal, which reduces the The difficulty of forming the first gate structure and the second gate structure improves the yield and reliability of the semiconductor structure. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114639728-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114639728-A |
| priorityDate | 2022-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.