| abstract |
The invention discloses a silicon nitride ceramic substrate, comprising silicon nitride hollow spheres that account for 50%-90% of the total mass of the silicon nitride ceramic substrate by mass fraction, and the remainder is additives and/or auxiliaries and impurities that cannot be removed. The silicon nitride ceramic substrate of the present invention uses silicon nitride hollow spheres as the main material, so it has good thermal conductivity, low density and low relative permittivity because of its hollowness, and the preparation process is simple, and it is easy to mass-produce Production. The present invention also discloses a method for manufacturing the above-mentioned silicon nitride ceramic substrate. |