http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114408928-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_53b8f5c2f9bf8e41e068aaf3c4999f95 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B35-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-037 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B35-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-037 |
filingDate | 2021-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4d1dc1f59a42eb645f409a8170a0580a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0191a167f91470a2a35a4576fa3f2c91 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5559c3d19d278a90f866c8edb2c43c69 |
publicationDate | 2022-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-114408928-A |
titleOfInvention | Silicon material processing method and silicon material processing device |
abstract | Embodiments of the present application provide a silicon material processing method and a silicon material processing device. The silicon material processing method specifically includes: loading the silicon material into the crucible in the furnace body; heating the silicon material to a first preset temperature with a heater; extending a gas duct from the outside of the furnace into the crucible in the furnace body; The reaction gas is introduced into the crucible, and the reaction gas at least includes a halogen-containing gas, so that the halogen-containing gas can react with the metal impurities in the silicon material, and the reaction time is the first preset time; step. In the embodiment of the present application, before the silicon rod is drawn, the halogen-containing gas can be used to fully react with the metal impurities in the silicon material to improve the purity of the silicon material. The quality of the silicon rod. Moreover, since the processed silicon material can be directly cut into the subsequent crystal pulling process without cleaning and transporting, to avoid the introduction of new impurities, the process of silicon material processing is relatively simple and efficient. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115491493-A |
priorityDate | 2021-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.