| abstract |
The present application provides a method for manufacturing a high-voltage LED chip. The sapphire substrate PSS in the embodiments of the present application has an upper and lower two-layer structure, the upper layer is silicon oxide SIO 2 , and the lower layer is sapphire AL 2 O 3 . Before the sapphire AL 2 O 3 is patterned, a layer of silicon oxide SIO 2 is deposited on the sapphire AL 2 O 3 , and then the sapphire substrate PSS is made by dry etching. After plasma ICP etching bridges the isolation groove, the sapphire substrate PSS is etched to remove the silicon oxide SIO 2 above the sapphire AL 2 O 3 . In this way, a flat platform is formed at the isolation groove of the high-voltage LED chip, which is convenient for subsequent bridge metal bridging. coverage, improve bridge metal fracture and other issues. |