http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114400247-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ac31afbea1cbbb03498644721ffb4a62 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0669 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y30-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y40-00 |
| filingDate | 2022-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9e99a6d338aee9de35e44b6c9b3bfac http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e9c73991786a4c706bfe640deba80d3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dfcde9d16ae0c841f747193a7c086565 |
| publicationDate | 2022-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114400247-A |
| titleOfInvention | Method for growing high-uniformity crystal silicon nanowires in batch |
| abstract | The invention discloses a method for growing high-uniformity crystal silicon nanowires in batch, which comprises the following steps: firstly, spin-coating photoresist on a target substrate provided with a guide groove, defining a pattern by utilizing photoetching, exposing a catalyst metal to-be-deposited area, and etching downwards by utilizing plasma to form a shadow step; secondly, utilizing oxygen plasma to horizontally and inwardly shrink the photoresist to form a deposition step; thirdly, rotating and fixing the target substrate sample, and evaporating and depositing a catalytic metal strip with a target width on the target substrate by taking the photoresist as a shadow; fourthly, placing the target sample in acetone solution for ultrasonic cleaning after evaporation, removing redundant photoresist, and treating and catalyzing metal by utilizing hydrogen plasma to obtain metal balls with uniform diameters; and fifthly, covering a layer of amorphous silicon precursor on the whole target substrate structure, and annealing to enable the catalytic metal ball to move along the guide groove and absorb the amorphous silicon precursor to form the nano wire with uniform target diameter. |
| priorityDate | 2022-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.