http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114361342-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_747306d01033f7d02bc9ad91570dbd09 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-15 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-88 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-48 |
| filingDate | 2022-01-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9484036a73dee0fff98c82279b9801a0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_52c1f3c59ad1d8345db7f6e437ee095a |
| publicationDate | 2022-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114361342-A |
| titleOfInvention | A kind of preparation method of amorphous-polycrystalline composite electron transport layer for perovskite solar cells |
| abstract | The invention belongs to the technical field of solar cells, and relates to a method for preparing an amorphous-polycrystalline composite electron transport layer for perovskite solar cells, and the perovskite solar cell structure of the amorphous-polycrystalline composite electron transport layer. From bottom to top are the substrate, the amorphous-polycrystalline composite electron transport layer, the perovskite light-absorbing layer, the hole transport layer, and the metal electrode. Compared with traditional SnO 2 -based perovskite solar cells, the amorphous-polycrystalline composite electron transport layer is more conducive to electron transport, increasing the charge transport rate, and the electron mobility is increased from the original 7.67*10 ‑4 cm 2 V ‑1 S ‑1 was increased to 1.45*10 ‑3 cm 2 V ‑1 S ‑1 , which reduced the charge recombination caused by SnO 2 surface defects, and the SnO 2 surface defect density of states decreased from 1.33*10 17 cm ‑3 to 3.66*10 16 cm ‑3 , the photoelectric conversion efficiency of the cell increased from 20.15% to 22.17%. |
| priorityDate | 2022-01-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.