http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114361028-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d548802412bee686a2ff1f8223d916dd http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ba3c1290c3133fb9b836364cf0bfa6bb http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7abb5b58dc0e7e606134c668a32bf3 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-329 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-861 |
| filingDate | 2021-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_401c30e3b8147f57b6110e92e92f99c1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_54219a174719d83e5be26f443f9dfb15 |
| publicationDate | 2022-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114361028-A |
| titleOfInvention | A chip and method of making the same |
| abstract | The present application discloses a chip and a manufacturing method thereof. The manufacturing method of the chip includes: polishing one side of a high-purity monocrystalline silicon wafer, and polishing one side of a low-purity monocrystalline silicon wafer; Align the polished surface of the high-purity single crystal silicon wafer with the polished surface of the low-purity single crystal silicon wafer for pre-bonding to form a pre-bonded silicon wafer, and place the pre-bonded silicon wafer on the bonding inside the chamber to form a bonded silicon wafer; polishing the high-purity single-crystal silicon wafer surface of the bonded silicon wafer, and sequentially forming an epitaxial layer and a functional device. The present application uses a low-purity single-crystal silicon wafer as a sacrificial layer, thereby reducing the thickness of the entire high-purity single-crystal silicon wafer and greatly reducing the material cost of the high-purity single-crystal silicon wafer and chips. |
| priorityDate | 2021-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.