http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114334617-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2022-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114334617-B |
| titleOfInvention | A method for photolithographic patterning of organic layers on substrates |
| abstract | The invention provides a method for photolithographic patterning of an organic layer on a substrate, the method comprising the steps of: providing a silicon dioxide protective layer on the organic layer, providing a photoresist layer on the silicon dioxide layer, The photoresist layer is photolithographically patterned to thereby form a patterned photoresist layer, the silicon dioxide protective layer and the organic layer are etched using the patterned photoresist layer as a mask, thereby forming The patterned protective layer and the patterned organic layer are based on a layer of SiO 2 protective layer grown on the organic layer. Good photolithography pattern; and can protect the organic semiconductor layer and insulating layer from being corroded by developer, glue remover and cleaning solution in the subsequent photolithography process. |
| priorityDate | 2022-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.