http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114273320-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2121353a93cc81ed834791a7078de62c |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D3-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B08B3-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D3-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B08B3-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D7-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D7-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D7-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D3-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D1-72 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D7-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D1-74 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D3-43 |
| filingDate | 2021-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_796105fdfa5c807c3ffda03e176c42cc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1b2939f3afd22abf88e971fa4bfb6345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e0d223b7bbe78b5bda033d32f30b7a3f |
| publicationDate | 2022-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114273320-A |
| titleOfInvention | A kind of cleaning process after dry etching of semiconductor wafer |
| abstract | The invention discloses a post-dry-etching cleaning process for a semiconductor wafer. The semiconductor wafer includes an exposed aluminum structure layer; the process includes the following steps: S1: cleaning agent A pre-cleans the dry-etching organic residue of the wafer, and after cleaning, water is used to clean the wafer. The wafer is cleaned with a soluble organic solvent; S2: The sacrificial layer of the wafer is cleaned and removed with a cleaning agent B mainly composed of a fluoride ion source, and after the cleaning is completed, the wafer is cleaned with a water-soluble organic solvent; S3: The ultrapure water is used to clean the wafer and dry it. Wafer; by mass percentage, the main composition of cleaning agent A is 30-60% sulfuric acid, 22-53% organic solvent, 15-25% water and 0.01-0.8% first compound corrosion inhibitor, The main components of the first compound corrosion inhibitor are amino acid corrosion inhibitor, mercapto heterocyclic compound and inorganic acid corrosion inhibitor. The post-dry-etching cleaning process for the semiconductor wafer of the present invention fully removes the dry-etching residue and the sacrificial layer and maintains the corrosion on the aluminum structure layer to a low level. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114985366-A |
| priorityDate | 2021-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 81.