http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114264926-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b97c3daa5625b55c92281d5d3a4942be |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-544 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R19-00 |
| filingDate | 2021-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c1cc4c6c1fc17415e5c5350eefdccea7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_52dd9e8569694e798974c879b1ba729d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1791e82e387e1796a9aea3d997481a28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_898f8481b9eac559d106d03b097caedd |
| publicationDate | 2022-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114264926-A |
| titleOfInvention | Single-via hole cross-layer electromigration test structure of single-side lead-out voltage test bonding pad |
| abstract | The invention relates to the technical field of semiconductors, in particular to a single-via hole cross-layer electromigration test structure with a voltage test bonding pad led out from one side, which comprises a silicon substrate layer and an insulating medium layer, wherein the insulating medium layer is arranged at the top of the silicon substrate layer, and the structure also comprises: the metallization test line, the interconnection detection line and the through hole are positioned in the insulating medium layer; the metallization test line: testing for electromigration effects; the interconnection detection line: metal lines for interconnection and detection; the through hole: for multi-hierarchy interconnects; large area metallized current test pad and voltage test pad: for current input and voltage reading, respectively. The interconnection detecting line includes: the device comprises a test line interconnection section, a metal interconnection line and a voltage detection line. The test structure comprises two metal layers and is used for evaluating the electromigration reliability problem caused in the manufacturing process of the semiconductor device. |
| priorityDate | 2021-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541 |
Total number of triples: 17.