http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114256409-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f7cbf6a1a55b84ca15e7f7de42102989 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_35c057a2d73ae88b28d28f9bb2a08715 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-85 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-01 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-08 |
| filingDate | 2020-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_27762c7b0e505737afe2b839cf90dc04 |
| publicationDate | 2022-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114256409-A |
| titleOfInvention | Magnetic tunnel junction and method of forming the same |
| abstract | The present application provides a magnetic tunnel junction and a method for forming the same. The magnetic tunnel junction includes: a free layer, a fixed layer, and a composite tunnel layer between the free layer and the fixed layer; the composite tunnel layer includes an insulating layer and a fixed layer. an auxiliary insulating layer, the insulating layer and the auxiliary insulating layer form a superlattice structure. The method for forming the magnetic tunnel junction includes: providing a fixed layer or a free layer; forming a composite tunnel layer on the fixed layer or the free layer, the composite tunnel layer comprising an insulating layer and an auxiliary insulating layer, the insulating layer and the auxiliary The insulating layer forms a superlattice structure. The composite tunnel junction of the technical solution of the present application can form a specific lattice orientation without subsequent annealing heat treatment, so it has a large TMR, and the formed device has high reliability, and can meet the requirements of miniaturization and high-speed reading of MRAM devices. write demand. |
| priorityDate | 2020-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 47.