http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114242854-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-02 |
| filingDate | 2022-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114242854-B |
| titleOfInvention | Homoepitaxy structure, preparation method and stripping method thereof |
| abstract | The invention discloses a homoepitaxial structure, which comprises a single crystal substrate, a nucleating layer grown on the single crystal substrate and an inserting layer grown on the nucleating layer, wherein the inserting layer is provided with an epitaxial layer which is made of the same material as the single crystal substrate; the materials of the nucleation layer and the insertion layer are the same, and the forbidden bandwidth of the materials of the nucleation layer and the insertion layer is smaller than that of the single crystal substrate material; the surface of the single crystal substrate is provided with a plurality of pits, and nucleation grains in the nucleation layer are distributed in island shapes at the pits and on the surface of the single crystal substrate. The invention also discloses a preparation method and a stripping method of the homoepitaxial structure. Compared with the existing stripping method of the homogeneous epitaxial layer, the stripping method of the homogeneous epitaxial structure is more efficient and is easy to realize industrial production. |
| priorityDate | 2022-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.