http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114242570-A

Outgoing Links

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filingDate 2021-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_28ffbac6a459e5e93c5b4ce3a989ce6f
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publicationDate 2022-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-114242570-A
titleOfInvention Method of forming a semiconductor structure
abstract A method for forming a semiconductor structure, comprising: providing a substrate, the substrate comprising a substrate and a pad layer on the substrate; forming an initial protective layer on the substrate, the initial protective layer covering the pad layer surface; removing part of the initial protective layer to form a protective layer, the protective layer has an opening located on the pad layer, and the protective layer located at the bottom of the opening covers the surface of the pad layer; cleaning the protective layer; after cleaning the protective layer, removing the protective layer at the bottom of the opening to expose the surface of the bonding pad layer. The method for forming the semiconductor structure reduces the crystal defects of the pad layer, thereby improving the bonding effect of the semiconductor structure and improving the reliability of the semiconductor device.
priorityDate 2021-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 23.