http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114220745-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_39a343ae0a2cd38717203e289062f9e4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_132013638df900d500b5d2a9b74b48d1 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-83 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68359 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68386 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6835 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-83 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-683 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60 |
| filingDate | 2021-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_762ec55e7e0c15a8046513777d572411 |
| publicationDate | 2022-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114220745-A |
| titleOfInvention | Back-to-face wafer-level hybrid bonding three-dimensional stacking method |
| abstract | The invention relates to a back-to-face wafer-level hybrid bonding three-dimensional stacking method, which comprises the following steps: providing a first wafer; the first wafer comprises a through silicon via positioned in the first wafer, a first interconnecting line positioned on the front surface of the first wafer, a first bonding pad positioned on the first interconnecting line, and a first passivation protective layer wrapping the first interconnecting line and the first bonding pad; thinning the back surface of the first wafer to expose the through silicon via; manufacturing a second interconnection line, a second bonding pad and a second passivation protective layer on the back of the first wafer; carrying out chemical mechanical polishing on the front surface of the second wafer to expose a third bonding pad; and carrying out hybrid bonding on the back surface of the first wafer and the front surface of the second wafer. |
| priorityDate | 2021-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.