| abstract |
The present invention provides the technical field of semiconductor production, in particular to a waste gas treatment system, including a reaction device and a nitrogen oxide treatment device, the nitrogen oxide treatment device includes a first reaction chamber and a catalytic assembly, and the catalytic assembly is arranged in the first reaction chamber The reaction device includes a second reaction chamber, a cooling chamber and a cooling nozzle, the cooling nozzle is arranged in the cooling chamber, and the outlet of the second reaction chamber is communicated with the inlet of the first reaction chamber through the cooling chamber. Using the high-temperature gas discharged from the second reaction chamber, by controlling the operation of the cooling nozzle, the temperature required by the gas during the catalytic reaction can be controlled, thereby saving the energy consumption of the catalytic reaction that needs to be heated again. According to different catalysts, the gas with nitrogen oxides can be adjusted to different temperatures through the cooling chamber, so as to meet the temperature required for the catalytic reaction of different catalysts. |