| abstract |
The invention discloses a two-dimensional/three-dimensional semiconductor heterojunction and a universal preparation method thereof, belonging to the field of preparation of semiconductor heterojunction materials. Semiconductor heterojunctions of the invention, e.g., MoS 2 /FeS,MoS 2 /CoS,MoS 2 /MnS,MoS 2 /ZnS,Mo(S x Se 1‑x ) 2 /ZnS x Se 1‑x ，Mo(S x Se 1‑x ) 2 /CdS x Se 1‑x (x represents atomic percent), and the like. The layered transition metal chalcogenide MoS is hereinafter represented by TMDCs 2 And Mo (S) x Se 1‑x ) 2 By XN, FeS, CoS, MnS, ZnS x Se 1‑x 、CdS x Se 1‑x . The preparation method provided by the invention is a chemical vapor deposition method and adopts Si/SiO 2 As a substrate, the prepared heterojunction has uniform surface and good single crystal property, the thickness of TMDCs is about 2nm, and the thickness of XN is 100-200 nm. |