http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114203529-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-342 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02505 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02507 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 |
| filingDate | 2022-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114203529-B |
| titleOfInvention | Aluminum nitride epitaxial structure, preparation method thereof and semiconductor device |
| abstract | The invention discloses an aluminum nitride epitaxial structure, which comprises a substrate and a superlattice buffer layer grown on the substrate, wherein an aluminum nitride epitaxial layer epitaxially grows on the superlattice buffer layer; the superlattice buffer layer comprises a plurality of buffer units which are sequentially superposed, and each buffer unit consists of a boron nitride buffer layer and an aluminum nitride buffer layer; the starting layer of the superlattice buffer layer is a boron nitride buffer layer, and the stopping layer of the superlattice buffer layer is an aluminum nitride buffer layer. The invention also discloses a preparation method of the aluminum nitride epitaxial structure and a semiconductor device comprising the aluminum nitride epitaxial structure. The aluminum nitride epitaxial structure provided by the invention solves the technical problems of high defect density, wafer cracking and the like caused by lattice mismatch when the aluminum nitride epitaxial layer grows on the foreign substrate, and can obtain the high-quality aluminum nitride single crystal epitaxial layer. |
| priorityDate | 2022-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.