http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114141892-A

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filingDate 2021-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2022-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-114141892-A
titleOfInvention Ferroelectric-semiconductor quantum dot coupling enhanced solar cell and preparation method thereof
abstract The invention provides a ferroelectric-semiconductor quantum dot coupling enhanced solar cell and a preparation method thereof. In the ferroelectric polarization-enhanced solar cell of the present invention, a ferroelectric layer is inserted between the n-type window layer and the p-type light absorption layer, and the materials of the ferroelectric layer are BaTiO 3 , Pb(Zr,Ti)O 3 , (K , Na)NbO 3 , BiFeO 3 , Bi 0.98 Ca 0.02 Fe 0.95 Mn 0.05 O 3 , the material of the ferroelectric layer has the characteristics of spontaneous polarization, under the action of the external polarization voltage, the inner part of the ferroelectric material The electric dipoles will be aligned. After the polarization voltage is removed, a ferroelectric depolarization electric field will still exist inside the ferroelectric material. The ferroelectric depolarization electric field in the ferroelectric layer is introduced into the solar cell, and the p-n junction is used. The built-in electric field and the ferroelectric depolarization electric field jointly separate the photogenerated carriers to improve the photoelectric conversion efficiency of the cell.
priorityDate 2021-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 44.