http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114141604-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_35c057a2d73ae88b28d28f9bb2a08715 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f7cbf6a1a55b84ca15e7f7de42102989 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02664 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02175 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28568 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02496 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02538 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28088 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2020-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_93c99ea2e102475bbe204adef6e02fe5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e53a7a84ee06127082600b827130df33 |
| publicationDate | 2022-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114141604-A |
| titleOfInvention | Semiconductor structure and forming method thereof |
| abstract | A semiconductor structure and method of forming the same, wherein the structure comprises: a substrate; the work function layer comprises a first face and a second face which are opposite, the distance between the first face and the surface of the substrate is smaller than that between the second face and the surface of the substrate, and the molar percentage concentration of aluminum atoms in the work function layer is reduced along the direction from the first face to the second face. The higher the molar percentage concentration of aluminum atoms in the work function layer at the bottom is, the more beneficial the reduction of the threshold voltage of the formed device is, so that the capability of adjusting the threshold voltage of the device is improved under the condition of not changing the thickness of the work function layer. Meanwhile, the mole percentage concentration of aluminum atoms in the work function layer at the top is lower, which is beneficial to reducing the probability of accumulation of aluminum atoms in the work function layer. The structure can improve the capability of adjusting the threshold voltage of the device, thereby improving the performance of the formed semiconductor structure. |
| priorityDate | 2020-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 60.