http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114122271-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_27a862b25ae5a5a49601c6c09c82b7a2 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K2102-00 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-865 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-56 |
| filingDate | 2020-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fce00f467e9414b5077beabf8ddbb8d1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0356a05e4d194554e9d76fe8ee19ee93 |
| publicationDate | 2022-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114122271-A |
| titleOfInvention | A kind of quantum dot light-emitting diode and preparation method thereof |
| abstract | The invention discloses a quantum dot light-emitting diode and a preparation method thereof. The quantum dot light-emitting diode comprises: an anode, a cathode, a quantum dot light-emitting layer arranged between the anode and the cathode, and a quantum dot light-emitting layer arranged between the quantum light-emitting layer and the cathode. The ZnO layer between the cathodes, and the transition layer disposed between the ZnO layer and the quantum dot light-emitting layer, the transition layer is made of materials selected from o-methoxybenzoic acid, o-methoxybenzoic acid One or more of derivatives, m-methoxybenzoic acid, m-methoxybenzoic acid derivatives, p-methoxybenzoic acid and p-methoxybenzoic acid derivatives. In the present invention, the above-mentioned transition layer is arranged between the ZnO layer of the QLED and the quantum dot light-emitting layer, which can passivate the defects of ZnO itself (such as oxygen vacancies, zinc gaps), reduce the work function of ZnO, and make the ZnO and quantum dots. The energy levels are more matched, so that the performance of the QLED is stable, the luminous performance is good, and the carrier transmission efficiency is high. |
| priorityDate | 2020-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.