| abstract |
The invention provides a chip stacking structure and a high-power narrow-pulse semiconductor laser, which belong to the technical field of photoelectricity and comprise: the MOSFET chip comprises a source electrode, a drain electrode and a grid electrode; a plurality of functional chips are stacked on the MOSFET chip along the height direction of the MOSFET chip, and the functional chip at the bottommost layer is connected with the source electrode of the MOSFET chip. The high-power narrow-pulse semiconductor laser provided by the invention adopts a chip stacking integration design, breaks through the limitation of circuit two-dimensional layout and discrete device packaging, adopts corresponding chip elements for all electronic components used by a circuit, integrates all chips in the height direction by adopting a certain process method, reduces the circuit layout and the electric connection distance of the laser to the minimum, greatly reduces the parasitic parameters of the circuit and improves the technical index of the high-power narrow-pulse semiconductor laser. |