| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e53cf9cd320442ada52dd68b0c2ca9bd |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3341
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3346
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32018
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32908
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32798
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31122 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2021-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_687c0ccfb879fbff69e8bc79027469ee
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bcd04dfc097ab7319435b4c9048577bc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bda0eaad188ca8969e1bc9b241ac25b4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4d079476f414d8add6a8cf2cbefab839 |
| publicationDate |
2022-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-114121587-A |
| titleOfInvention |
Plasma Etching System |
| abstract |
The present disclosure proposes a plasma etching system. Plasma etching systems are used for radically activated etching of metal oxides. A plasma etching system includes a chamber; a chip holder configured to hold a chip having a metal oxide disposed thereon; a first gas line fluidly connected to the chamber and configured to supply a gas to the chamber; A plasma generator for gas-generated plasma; between the plasma generator and the chip holder, a grid system configured to increase the kinetic energy of ions from the plasma; between the grid system and the chip holder, configured to generate electrons and a neutralizer that neutralizes ions to generate free radicals; and a second gas line fluidly connected to the chamber and configured to supply a precursor to the chip. The free radicals facilitate the etching of the metal oxide through the precursor. |
| priorityDate |
2020-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |