http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114078745-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c8fbf590463d3518a746d90a6a2c1c34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5e829b93e1bdf87272f2aaf3baaaa0f4 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76805 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76895 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53266 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48 |
| filingDate | 2020-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_234261a54116b48f3e396f29798daaab http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c01034f7abb8d51e9922575ea989e71 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c8db08b15ff4e8b7f9b44cdad0141f5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a928c360a2cbff17dff86514b8453fcf |
| publicationDate | 2022-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114078745-A |
| titleOfInvention | Interconnect structure and method of forming the same |
| abstract | The application provides an interconnection structure and a forming method thereof, wherein the forming method comprises the following steps: providing a substrate, wherein the substrate comprises an active region, a dielectric layer is formed on the surface of the substrate, an opening penetrating through the dielectric layer is formed in the dielectric layer, and the opening exposes the surface of the active region; forming a first metal layer on the surface of the dielectric layer, the side wall and the bottom of the opening, and simultaneously carrying out annealing treatment to enable part of the first metal layer at the bottom of the opening to react with the material on the surface of the active region to form a metal silicide layer; removing the residual first metal layer on the surface of the dielectric layer, the side wall of the opening and the bottom of the opening; and forming an adhesion barrier layer on the surface of the dielectric layer, the side wall of the opening and the surface of the metal silicide layer. The forming method can avoid the defect caused by the corrosion of the first metal layer by the fluorine-containing compound generated during metal filling, also can provide larger space for subsequent metal filling, increases the volume of the metal filling and reduces the contact resistance. |
| priorityDate | 2020-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.