| abstract |
The semiconductor device includes a plurality of semiconductor layers vertically separated from each other. Each semiconductor layer extends along a first lateral direction. The semiconductor device includes a gate structure extending along the second lateral direction and including at least an underside portion overlying each semiconductor layer. The underside portion of the gate structure includes a plurality of first gate portions to be laterally aligned with the semiconductor layer, respectively, and wherein ends of each first gate portion each extend along the second lateral direction and have a first arcuate profile . |