| abstract |
The invention relates to an optoelectronic device (55) comprising one or more light emitting diodes (DEL), each light emitting diode comprising a three-dimensional semiconductor element (26), an active area (40) resting on the three-dimensional semiconductor element, and a cover A stack (42) of semiconductor layers (44; 46; 48) of an active region, the active region comprising a plurality of quantum wells (50), the stack being in direct physical contact with the plurality of quantum wells. |