| abstract |
The invention discloses a tellurium, selenide, arsenic and cadmium compound/target material and a preparation method, which comprises cadmium telluride particles, cadmium telluride selenide particles and The cadmium arsenide particles are ground into powder and mixed uniformly, and the mixed material is put into a graphite crucible, or the mixed material is put into a mold and pressed into a target blank at room temperature, and the formed target blank is loaded into graphite In the jig, the graphite jig is put into the vacuum sintering furnace, compacted in the vacuum sintering furnace, heated and sintered in a vacuum state, naturally cooled to room temperature, and the vacuum sintering furnace is opened to obtain the tellurium selenium arsenic cadmium compound/target. The above-mentioned preparation method can meet the needs of large-scale production in the market, and has the advantages of simple procedure and environmental friendliness. The prepared tellurium selenide arsenic cadmium compound has good crystallinity, and the prepared tellurium selenide arsenic cadmium target has a relative density higher than 90% (the grain size is less than 300 nm). |