http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113948647-A

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filingDate 2020-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_daa7a94ee1ee1eb1dcbcbf7c4fe20dc4
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publicationDate 2022-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-113948647-A
titleOfInvention A kind of nanometer material and its preparation method and quantum dot light-emitting diode
abstract The invention discloses a nanomaterial, a preparation method thereof, and a quantum dot light-emitting diode. The nanomaterial has a core-shell structure, and the core of the nanomaterial includes: ZnO nanoparticle and metal doped in the ZnO nanoparticle element; the outer shell of the nanomaterial includes: a metal oxide. The invention can adjust the energy level structure and electron transmission efficiency of the whole nanomaterial by doping other metal elements in the zinc oxide nanoparticle and wrapping a layer of metal oxide shell, so that the energy level of the quantum dots and the nanomaterial in the device can be adjusted. The level is more matched, reducing the transfer of electrons in the quantum dot light-emitting layer to the electron transport layer, improving the electron-hole recombination efficiency of the quantum dot light-emitting layer; making the electron-hole injection of the device more balanced and reducing the charge accumulation of the quantum dot light-emitting layer , inhibit Auger recombination, improve the radiation recombination efficiency of electron holes; make the zinc oxide nanoparticles more stable, and improve the overall stability of the device.
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