| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dc483459e58e5df945c123ddc3ea8d3e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-5866
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N10-852
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-5806
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N10-01
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0623 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-28 |
| filingDate |
2021-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e595711ccb109c17dc0c2274ea89fde
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff68dfbfa65e1e88f1e06a223c47966c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da48cb243be0e3d8f54134ffcd418249
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b0348ff0986e62a10951288ca50e7dc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_85b508e3b5d678532c44249dea16d3ec
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c6001c85d0119bc45bbb4c2c0d29715 |
| publicationDate |
2022-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-113937210-A |
| titleOfInvention |
Method for preparing SnSe/SnSe2 composite thermoelectric thin film by selenization |
| abstract |
The invention provides a method for preparing a SnSe/SnSe 2 composite thermoelectric thin film by selenization, comprising the following steps: (a) preparing the SnSe thermoelectric thin film by using a pulsed laser deposition technique; (b) repeatedly performing ultrasonic cleaning on a quartz tube with water and alcohol, Then put it into a constant temperature drying oven for drying; (c) use the vacuum sealing technology to encapsulate the SnSe thermoelectric film and selenium particles together in the quartz tube; (d) put the quartz tube into the annealing furnace for 10-60min The temperature is raised to 225-350° C. and kept for 10-120 min to selenize the SnSe film in the quartz tube, and finally cooled down to room temperature naturally to obtain the SnSe/SnSe 2 composite thermoelectric film. The composite film of the invention has excellent thermoelectric properties, and has broad application prospects in the field of thermoelectric micro-nano devices. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114686986-A |
| priorityDate |
2021-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |