http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113921708-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1fefd66fdbc3870bbaa8e5a4f87bdb0a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-823 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-011 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 |
| filingDate | 2021-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a464430988ab803dce9f129163d8b2fb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff98e8e13e2c41c3f80ac4b3732cde9b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_57e5d46a9f123de13f89c1504a794674 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_06666d349fb7561ecd955472a221c7f7 |
| publicationDate | 2022-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-113921708-A |
| titleOfInvention | A surface-type memristive integrated device based on in-plane anisotropy of two-dimensional materials |
| abstract | The invention belongs to the technical field of microelectronics, and discloses a surface-type memristive integrated device based on in-plane anisotropy of two-dimensional materials and a preparation method thereof. The surface-type memristive integrated device comprises: a substrate, a dielectric layer, a common electrode and a The terminal electrode; the common electrode is an active metal material, the terminal electrode is an inert conductive material, the dielectric layer is a two-dimensional atomic crystal material with a layered structure like black phosphorus and is L-shaped, and the two sides of the L-shaped are respectively located in the zigzag crystal of the two-dimensional atomic crystal. The common electrode is located at the corner of the L-shape, and there are two terminal electrodes at the two ends of the L-shape. The invention makes use of the difference in the migration barrier of metal ions in two crystal directions of a two-dimensional atomic crystal, and prepares an integrated device including two memristive units along the two different crystal directions of the dielectric material. The modulation of the anisotropy of the conductive filaments achieves different functions in the same device. |
| priorityDate | 2021-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.